mtd: nand: refactor BB marker detection

[net-next-2.6.git] / drivers / mtd / nand / nand_base.c

diff --git a/drivers/mtd/nand/nand_base.c b/drivers/mtd/nand/nand_base.c
index 85891dcc27ad2b5c71f27ad36a54370b7afb9413..bd697909db53a3ae4c76759e0a83298a68362954 100644 (file)
--- a/drivers/mtd/nand/nand_base.c
+++ b/drivers/mtd/nand/nand_base.c
@@ -347,6 +347,9 @@ static int nand_block_bad(struct mtd_info *mtd, loff_t ofs, int getchip)
        struct nand_chip *chip = mtd->priv;
        u16 bad;
 
+       if (chip->options & NAND_BBT_SCANLASTPAGE)
+               ofs += mtd->erasesize - mtd->writesize;
+
        page = (int)(ofs >> chip->page_shift) & chip->pagemask;
 
        if (getchip) {
@@ -396,6 +399,9 @@ static int nand_default_block_markbad(struct mtd_info *mtd, loff_t ofs)
        uint8_t buf[2] = { 0, 0 };
        int block, ret;
 
+       if (chip->options & NAND_BBT_SCANLASTPAGE)
+               ofs += mtd->erasesize - mtd->writesize;
+
        /* Get block number */
        block = (int)(ofs >> chip->bbt_erase_shift);
        if (chip->bbt)
@@ -2914,9 +2920,14 @@ static struct nand_flash_dev *nand_get_flash_type(struct mtd_info *mtd,
                chip->chip_shift = ffs((unsigned)(chip->chipsize >> 32)) + 32 - 1;
 
        /* Set the bad block position */
-       chip->badblockpos = mtd->writesize > 512 ?
-               NAND_LARGE_BADBLOCK_POS : NAND_SMALL_BADBLOCK_POS;
-       chip->badblockbits = 8;
+       if (!(busw & NAND_BUSWIDTH_16) && (*maf_id == NAND_MFR_STMICRO ||
+                               (*maf_id == NAND_MFR_SAMSUNG &&
+                                mtd->writesize == 512) ||
+                               *maf_id == NAND_MFR_AMD))
+               chip->badblockpos = NAND_SMALL_BADBLOCK_POS;
+       else
+               chip->badblockpos = NAND_LARGE_BADBLOCK_POS;
+
 
        /* Get chip options, preserve non chip based options */
        chip->options &= ~NAND_CHIPOPTIONS_MSK;
@@ -2933,6 +2944,26 @@ static struct nand_flash_dev *nand_get_flash_type(struct mtd_info *mtd,
        if (*maf_id != NAND_MFR_SAMSUNG && !type->pagesize)
                chip->options &= ~NAND_SAMSUNG_LP_OPTIONS;
 
+       /*
+        * Bad block marker is stored in the last page of each block
+        * on Samsung and Hynix MLC devices; stored in first two pages
+        * of each block on Micron devices with 2KiB pages and on
+        * SLC Samsung, Hynix, and AMD/Spansion. All others scan only
+        * the first page.
+        */
+       if ((chip->cellinfo & NAND_CI_CELLTYPE_MSK) &&
+                       (*maf_id == NAND_MFR_SAMSUNG ||
+                        *maf_id == NAND_MFR_HYNIX))
+               chip->options |= NAND_BBT_SCANLASTPAGE;
+       else if ((!(chip->cellinfo & NAND_CI_CELLTYPE_MSK) &&
+                               (*maf_id == NAND_MFR_SAMSUNG ||
+                                *maf_id == NAND_MFR_HYNIX ||
+                                *maf_id == NAND_MFR_AMD)) ||
+                       (mtd->writesize == 2048 &&
+                        *maf_id == NAND_MFR_MICRON))
+               chip->options |= NAND_BBT_SCAN2NDPAGE;
+
+
        /* Check for AND chips with 4 page planes */
        if (chip->options & NAND_4PAGE_ARRAY)
                chip->erase_cmd = multi_erase_cmd;